1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source 2SK3458 features low gate charge q g = 25 nc typ. (v dd = 450 v, v gs =10v,i d =6.0a) gate voltage rating 30 v low on-state resistance r ds(on) =2.2 max. (v gs =10v,i d =3.0a) avalanche capability ratings surface mount package available absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 800 v gate to source voltage v gss 30 v i d 6.0 a i dp * 24 a power dissipation t c =25 100 t a =25 1.5 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =800v,v gs =0 100 a gate leakage current i gss v gs = 30v,v ds =0 100 a gat cutoff voltage v gs(off) v ds =10v,i d =1ma 2.5 3.5 v forward transfer admittance y fs v ds =10v,i d =3.0a 2.0 s draintosourceon-stateresistance r ds(on)1 v gs =10v,i d =3.0a 1.8 2.2 input capacitance c iss 1220 pf output capacitance c oss 170 pf reverse transfer capacitance c rss 16 pf turn-on delay time t on 17 ns rise time t r 7ns turn-off delay time t off 43 ns fall time tf 11 ns total gate charge q g 25 nc gate to source charge q gs 6nc gate to drain charge q gd 10 nc v ds =10v,v gs =0,f=1mhz i d =3.0a,v gs(on) =10v,r g =10 ,v dd =150v i d =6.0a, v dd =450v, v gs =10v product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
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